Localized state and charge transfer in nitrogen-doped graphene

F. Joucken, Y. Tison, J. Lagoute, J. Dumont, D. Cabosart, B. Zheng, V. Repain, C. Chacon, Y. Girard, A.R. Botello-Méndez, S. Rousset, R. Sporken, J.-C. Charlier, L. Henrard

Résultats de recherche: Contribution à un journal/une revueArticle

117 Downloads (Pure)

Résumé

Nitrogen-doped epitaxial graphene grown on SiC(0001̄) was prepared by exposing the surface to an atomic nitrogen flux. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS), supported by density functional theory (DFT) calculations, the simple substitution of carbon with nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. Local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole doping. © 2012 American Physical Society.
langue originaleAnglais
journalPhyscal Review B
Volume85
Numéro de publication16
Les DOIs
étatPublié - 18 avr. 2012

Empreinte digitale

Graphite
Graphene
Charge transfer
graphene
Nitrogen
charge transfer
nitrogen
nitrogen atoms
Doping (additives)
substitutes
Atoms
scanning
carbon
Substitution reactions
Carbon
configurations
Spectroscopy
spectroscopy
Scanning
scanning tunneling microscopy

Citer ceci

Joucken, F. ; Tison, Y. ; Lagoute, J. ; Dumont, J. ; Cabosart, D. ; Zheng, B. ; Repain, V. ; Chacon, C. ; Girard, Y. ; Botello-Méndez, A.R. ; Rousset, S. ; Sporken, R. ; Charlier, J.-C. ; Henrard, L. / Localized state and charge transfer in nitrogen-doped graphene. Dans: Physcal Review B. 2012 ; Vol 85, Numéro 16.
@article{9e9af87305824bc8a4566685e8b0bfd8,
title = "Localized state and charge transfer in nitrogen-doped graphene",
abstract = "Nitrogen-doped epitaxial graphene grown on SiC(0001̄) was prepared by exposing the surface to an atomic nitrogen flux. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS), supported by density functional theory (DFT) calculations, the simple substitution of carbon with nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. Local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole doping. {\circledC} 2012 American Physical Society.",
author = "F. Joucken and Y. Tison and J. Lagoute and J. Dumont and D. Cabosart and B. Zheng and V. Repain and C. Chacon and Y. Girard and A.R. Botello-M{\'e}ndez and S. Rousset and R. Sporken and J.-C. Charlier and L. Henrard",
year = "2012",
month = "4",
day = "18",
doi = "10.1103/PhysRevB.85.161408",
language = "English",
volume = "85",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "2469-9950",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Joucken, F, Tison, Y, Lagoute, J, Dumont, J, Cabosart, D, Zheng, B, Repain, V, Chacon, C, Girard, Y, Botello-Méndez, AR, Rousset, S, Sporken, R, Charlier, J-C & Henrard, L 2012, 'Localized state and charge transfer in nitrogen-doped graphene', Physcal Review B, VOL. 85, Numéro 16. https://doi.org/10.1103/PhysRevB.85.161408

Localized state and charge transfer in nitrogen-doped graphene. / Joucken, F.; Tison, Y.; Lagoute, J.; Dumont, J.; Cabosart, D.; Zheng, B.; Repain, V.; Chacon, C.; Girard, Y.; Botello-Méndez, A.R.; Rousset, S.; Sporken, R.; Charlier, J.-C.; Henrard, L.

Dans: Physcal Review B, Vol 85, Numéro 16, 18.04.2012.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Localized state and charge transfer in nitrogen-doped graphene

AU - Joucken, F.

AU - Tison, Y.

AU - Lagoute, J.

AU - Dumont, J.

AU - Cabosart, D.

AU - Zheng, B.

AU - Repain, V.

AU - Chacon, C.

AU - Girard, Y.

AU - Botello-Méndez, A.R.

AU - Rousset, S.

AU - Sporken, R.

AU - Charlier, J.-C.

AU - Henrard, L.

PY - 2012/4/18

Y1 - 2012/4/18

N2 - Nitrogen-doped epitaxial graphene grown on SiC(0001̄) was prepared by exposing the surface to an atomic nitrogen flux. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS), supported by density functional theory (DFT) calculations, the simple substitution of carbon with nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. Local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole doping. © 2012 American Physical Society.

AB - Nitrogen-doped epitaxial graphene grown on SiC(0001̄) was prepared by exposing the surface to an atomic nitrogen flux. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS), supported by density functional theory (DFT) calculations, the simple substitution of carbon with nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. Local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole doping. © 2012 American Physical Society.

UR - http://www.scopus.com/inward/record.url?scp=84860231715&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.161408

DO - 10.1103/PhysRevB.85.161408

M3 - Article

VL - 85

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 2469-9950

IS - 16

ER -