Electronic properties and STM images of doped bilayer graphene

Stéphane-Olivier Guillaume, B. Zheng, J.-C. Charlier, L. Henrard

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Electronic structures and scanning tunneling microscopy (STM) patterns of boron- and nitrogen-doped bilayer graphene are predicted using state-of-the-art first-principles calculations. Asymmetric doping is considered, leading to different charge-carrier densities on each graphene layer and to a band-gap opening. When lying on the top layer, the local STM patterns of the dopant are predicted to be similar to images observed in monolayer graphene. In contrast, the local electronic states of the buried dopant are not directly detectable by STM. However, by analyzing the charge transfer between graphene layers and its effect on the contrast of the STM image, the chemical doping is found to affect the symmetry (hexagonal and triangular) of the observed lattice for both the top doped surface and the buried doped layer. Consequently, our ab initio simulations predict a possible indirect detection of N or B dopants buried in bilayer graphene when such a contrast is revealed by a series of STM images or using scanning tunneling spectroscopy. © 2012 American Physical Society.
langue originaleAnglais
journalPhysical Review B
Volume85
Numéro de publication3
Les DOIs
étatPublié - 27 janv. 2012

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Graphite
Scanning tunneling microscopy
Electronic properties
Graphene
scanning tunneling microscopy
graphene
Doping (additives)
electronics
Boron
Electronic states
Charge carriers
Electronic structure
Carrier concentration
Charge transfer
charge carriers
Monolayers
boron
Energy gap
Nitrogen
charge transfer

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title = "Electronic properties and STM images of doped bilayer graphene",
abstract = "Electronic structures and scanning tunneling microscopy (STM) patterns of boron- and nitrogen-doped bilayer graphene are predicted using state-of-the-art first-principles calculations. Asymmetric doping is considered, leading to different charge-carrier densities on each graphene layer and to a band-gap opening. When lying on the top layer, the local STM patterns of the dopant are predicted to be similar to images observed in monolayer graphene. In contrast, the local electronic states of the buried dopant are not directly detectable by STM. However, by analyzing the charge transfer between graphene layers and its effect on the contrast of the STM image, the chemical doping is found to affect the symmetry (hexagonal and triangular) of the observed lattice for both the top doped surface and the buried doped layer. Consequently, our ab initio simulations predict a possible indirect detection of N or B dopants buried in bilayer graphene when such a contrast is revealed by a series of STM images or using scanning tunneling spectroscopy. {\circledC} 2012 American Physical Society.",
author = "St{\'e}phane-Olivier Guillaume and B. Zheng and J.-C. Charlier and L. Henrard",
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Electronic properties and STM images of doped bilayer graphene. / Guillaume, Stéphane-Olivier; Zheng, B.; Charlier, J.-C.; Henrard, L.

Dans: Physical Review B, Vol 85, Numéro 3, 27.01.2012.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Electronic properties and STM images of doped bilayer graphene

AU - Guillaume, Stéphane-Olivier

AU - Zheng, B.

AU - Charlier, J.-C.

AU - Henrard, L.

PY - 2012/1/27

Y1 - 2012/1/27

N2 - Electronic structures and scanning tunneling microscopy (STM) patterns of boron- and nitrogen-doped bilayer graphene are predicted using state-of-the-art first-principles calculations. Asymmetric doping is considered, leading to different charge-carrier densities on each graphene layer and to a band-gap opening. When lying on the top layer, the local STM patterns of the dopant are predicted to be similar to images observed in monolayer graphene. In contrast, the local electronic states of the buried dopant are not directly detectable by STM. However, by analyzing the charge transfer between graphene layers and its effect on the contrast of the STM image, the chemical doping is found to affect the symmetry (hexagonal and triangular) of the observed lattice for both the top doped surface and the buried doped layer. Consequently, our ab initio simulations predict a possible indirect detection of N or B dopants buried in bilayer graphene when such a contrast is revealed by a series of STM images or using scanning tunneling spectroscopy. © 2012 American Physical Society.

AB - Electronic structures and scanning tunneling microscopy (STM) patterns of boron- and nitrogen-doped bilayer graphene are predicted using state-of-the-art first-principles calculations. Asymmetric doping is considered, leading to different charge-carrier densities on each graphene layer and to a band-gap opening. When lying on the top layer, the local STM patterns of the dopant are predicted to be similar to images observed in monolayer graphene. In contrast, the local electronic states of the buried dopant are not directly detectable by STM. However, by analyzing the charge transfer between graphene layers and its effect on the contrast of the STM image, the chemical doping is found to affect the symmetry (hexagonal and triangular) of the observed lattice for both the top doped surface and the buried doped layer. Consequently, our ab initio simulations predict a possible indirect detection of N or B dopants buried in bilayer graphene when such a contrast is revealed by a series of STM images or using scanning tunneling spectroscopy. © 2012 American Physical Society.

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JO - Physical Review B - Condensed Matter and Materials Physics

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