Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass

David Barba, R.S. Cai, Julien Demarche, Y.Q. Wang, Guy Terwagne, F. Rosei, François Martin, Guy G. Ross

Research output: Contribution to journalArticle

Original languageEnglish
JournalApplied Physics Letters
Volume104
Issue number111901
Publication statusAccepted/In press - 17 Mar 2014

Cite this

Barba, David ; Cai, R.S. ; Demarche, Julien ; Wang, Y.Q. ; Terwagne, Guy ; Rosei, F. ; Martin, François ; Ross, Guy G. / Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass. In: Applied Physics Letters. 2014 ; Vol. 104, No. 111901.
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Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass. / Barba, David; Cai, R.S.; Demarche, Julien; Wang, Y.Q.; Terwagne, Guy; Rosei, F.; Martin, François; Ross, Guy G.

In: Applied Physics Letters, Vol. 104, No. 111901, 17.03.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass

AU - Barba, David

AU - Cai, R.S.

AU - Demarche, Julien

AU - Wang, Y.Q.

AU - Terwagne, Guy

AU - Rosei, F.

AU - Martin, François

AU - Ross, Guy G.

PY - 2014/3/17

Y1 - 2014/3/17

M3 - Article

VL - 104

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

SN - 0003-6951

IS - 111901

ER -