Effective attenuation length of AlKa excited Si2p photoelectron in SiO2, Al2O3 and HfO2 thin films

Effective attenuation length of AlKa excited Si2p photoelectron in SiO₂, Al₂O₃ and HfO₂ thin films

Roumen Vitchev, Ch. Defranoux, J. Wolstenholme, Thierry Conard, H. Bender, Jean-Jacques Pireaux

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	37-44
Number of pages	8
Journal	Journal of Electronic Spectroscopy and Related Phenomena
Volume	149
Issue number	12
Publication status	Published - 2005

@article{f920787e8c7d413ea218acd4e0c53b11,

title = "Effective attenuation length of AlKa excited Si2p photoelectron in SiO2, Al2O3 and HfO2 thin films",

author = "Roumen Vitchev and Ch. Defranoux and J. Wolstenholme and Thierry Conard and H. Bender and Jean-Jacques Pireaux",

year = "2005",

language = "English",

volume = "149",

pages = "37--44",

journal = "Journal of Electronic Spectroscopy and Related Phenomena",

publisher = "Elsevier",

number = "12",

}

TY - JOUR

T1 - Effective attenuation length of AlKa excited Si2p photoelectron in SiO2, Al2O3 and HfO2 thin films

AU - Vitchev, Roumen

AU - Defranoux, Ch.

AU - Wolstenholme, J.

AU - Conard, Thierry

AU - Bender, H.

AU - Pireaux, Jean-Jacques

PY - 2005

Y1 - 2005

M3 - Article

VL - 149

SP - 37

EP - 44

JO - Journal of Electronic Spectroscopy and Related Phenomena

JF - Journal of Electronic Spectroscopy and Related Phenomena

IS - 12

ER -