Résumé
In this study we have grown epitaxial layers of wurtzite–CdS on CdTe()B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5×1017 to 1.4×1021 cm−3 and agree well with the variation expected from the In flux.
langue originale | Anglais |
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Pages (de - à) | 975-979 |
Nombre de pages | 5 |
journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 161-163 |
Les DOIs | |
Etat de la publication | Publié - 2000 |