SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

Paul Boieriu; Robert Sporken; A Adriaens; Yan Xin; Nigel Browning; Siva Sivananthan

doi:10.1016/S0168-583X(99)00926-X

SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

Paul Boieriu, Robert Sporken, A Adriaens, Yan Xin, Nigel Browning, Siva Sivananthan

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Abstract

In this study we have grown epitaxial layers of wurtzite–CdS on CdTe()B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5×1017 to 1.4×1021 cm−3 and agree well with the variation expected from the In flux.

Original language	English
Pages (from-to)	975-979
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	161-163
DOIs	https://doi.org/10.1016/S0168-583X(99)00926-X
Publication status	Published - 2000

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title = "SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE",

abstract = "In this study we have grown epitaxial layers of wurtzite–CdS on CdTe()B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5×1017 to 1.4×1021 cm−3 and agree well with the variation expected from the In flux.",

author = "Paul Boieriu and Robert Sporken and A Adriaens and Yan Xin and Nigel Browning and Siva Sivananthan",

note = "Publication code : **RES. ACAD.",

year = "2000",

doi = "10.1016/S0168-583X(99)00926-X",

language = "English",

volume = "161-163",

pages = "975--979",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

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TY - JOUR

T1 - SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

AU - Boieriu, Paul

AU - Sporken, Robert

AU - Adriaens, A

AU - Xin, Yan

AU - Browning, Nigel

AU - Sivananthan, Siva

N1 - Publication code : **RES. ACAD.

PY - 2000

Y1 - 2000

N2 - In this study we have grown epitaxial layers of wurtzite–CdS on CdTe()B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5×1017 to 1.4×1021 cm−3 and agree well with the variation expected from the In flux.

AB - In this study we have grown epitaxial layers of wurtzite–CdS on CdTe()B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5×1017 to 1.4×1021 cm−3 and agree well with the variation expected from the In flux.

U2 - 10.1016/S0168-583X(99)00926-X

DO - 10.1016/S0168-583X(99)00926-X

M3 - Article

SN - 0168-583X

VL - 161-163

SP - 975

EP - 979

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

Abstract

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