Sealing of porous low-k dielectrics: an ellipsometric porosimetry study of UV-O3 oxidized SiOxCy films

Keyphrases

• SiOx 100%
• Porosity 100%
• Porous Low-k Dielectric 100%
• Ellipsometric Porosimetry 100%
• Silicon Oxycarbide Film 33%
• Induced Oxidation 33%
• Porous Materials 33%
• Exposure Time 33%
• Insulator Material 33%
• Chemical Species 33%
• Low Dielectric Constant 33%
• Chemical Vapor 33%
• Film Thickness 33%
• UV-ozone 33%
• Low-k Dielectric 33%
• Pore Sealing 33%

Material Science

• Film 100%
• Dielectric Material 100%
• Ellipsometric Porosimetry 100%
• Film Thickness 33%
• Refractive Index 33%
• Oxidation Reaction 33%
• Pore Size 33%
• Silicon Oxycarbide 33%
• Permittivity 33%

INIS

• chemical vapor deposition 25%
• dielectric constant 25%
• oxycarbides 25%