Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont; M. Mugumaoderha C.; T. Seldrum; F. Frising; C. Moisson; D. Turover; R. Sporken

doi:10.1116/1.2746339

Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont, M. Mugumaoderha C., T. Seldrum, F. Frising, C. Moisson, D. Turover, R. Sporken

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Résumé

The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

langue originale	Anglais
Pages (de - à)	1536-1541
Nombre de pages	6
journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Numéro de publication	4
Les DOIs	https://doi.org/10.1116/1.2746339
Etat de la publication	Publié - 2007

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10.1116/1.2746339

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Contient cette citation

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title = "Formation of (Zn,Co)O by annealing of Co overlayers on ZnO",

abstract = "The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.",

author = "J. Dumont and {Mugumaoderha C.}, M. and T. Seldrum and F. Frising and C. Moisson and D. Turover and R. Sporken",

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AU - Dumont, J.

AU - Mugumaoderha C., M.

AU - Seldrum, T.

AU - Frising, F.

AU - Moisson, C.

AU - Turover, D.

AU - Sporken, R.

PY - 2007

Y1 - 2007

N2 - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

AB - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

Résumé

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Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)

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