Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

langue originaleAnglais
Pages (de - à)1536-1541
Nombre de pages6
journalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Numéro de publication4
Les DOIs
étatPublié - 2007

Empreinte digitale

Annealing
annealing
Low energy electron diffraction
Scanning tunneling microscopy
Auger electron spectroscopy
Coalescence
coalescing
Auger spectroscopy
electron spectroscopy
scanning tunneling microscopy
electron diffraction
attenuation
room temperature
matrices
Temperature
energy

Citer ceci

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title = "Formation of (Zn,Co)O by annealing of Co overlayers on ZnO",
abstract = "The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50{\%} or higher.",
author = "J. Dumont and {Mugumaoderha C.}, M. and T. Seldrum and F. Frising and C. Moisson and D. Turover and R. Sporken",
year = "2007",
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language = "English",
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pages = "1536--1541",
journal = "Journal of vacuum science and technology B",
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Formation of (Zn,Co)O by annealing of Co overlayers on ZnO. / Dumont, J.; Mugumaoderha C., M.; Seldrum, T.; Frising, F.; Moisson, C.; Turover, D.; Sporken, R.

Dans: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol 25, Numéro 4, 2007, p. 1536-1541.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

AU - Dumont, J.

AU - Mugumaoderha C., M.

AU - Seldrum, T.

AU - Frising, F.

AU - Moisson, C.

AU - Turover, D.

AU - Sporken, R.

PY - 2007

Y1 - 2007

N2 - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

AB - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

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