Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont, M. Mugumaoderha C., T. Seldrum, F. Frising, C. Moisson, D. Turover, R. Sporken

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The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

langue originaleAnglais
Pages (de - à)1536-1541
Nombre de pages6
journalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Numéro de publication4
Les DOIs
Etat de la publicationPublié - 2007

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