Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont, M. Mugumaoderha C., T. Seldrum, F. Frising, C. Moisson, D. Turover, R. Sporken

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs


    The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

    langue originaleAnglais
    Pages (de - à)1536-1541
    Nombre de pages6
    journalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Numéro de publication4
    Les DOIs
    Etat de la publicationPublié - 2007

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