Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont, M. Mugumaoderha C., T. Seldrum, F. Frising, C. Moisson, D. Turover, R. Sporken

Research output: Contribution to journalArticle

Abstract

The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

Original languageEnglish
Pages (from-to)1536-1541
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
Publication statusPublished - 2007

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