Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont; M. Mugumaoderha C.; T. Seldrum; F. Frising; C. Moisson; D. Turover; R. Sporken

doi:10.1116/1.2746339

Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

J. Dumont, M. Mugumaoderha C., T. Seldrum, F. Frising, C. Moisson, D. Turover, R. Sporken

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Abstract

The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

Original language	English
Pages (from-to)	1536-1541
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
DOIs	https://doi.org/10.1116/1.2746339
Publication status	Published - 2007

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10.1116/1.2746339

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title = "Formation of (Zn,Co)O by annealing of Co overlayers on ZnO",

abstract = "The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.",

author = "J. Dumont and {Mugumaoderha C.}, M. and T. Seldrum and F. Frising and C. Moisson and D. Turover and R. Sporken",

year = "2007",

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AU - Dumont, J.

AU - Mugumaoderha C., M.

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AU - Frising, F.

AU - Moisson, C.

AU - Turover, D.

AU - Sporken, R.

PY - 2007

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N2 - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

AB - The effect of annealing of CoZnO (0001) was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. At room temperature, Co forms islands on ZnO. Annealing up to 940 K leads to coalescence of the islands. At 970 K, Co diffuses into ZnO where it partially replaces Zn. A model of the Auger intensities, based on exponential attenuation with thickness and including correction for matrix effects, confirms this interpretation and suggests that the fraction of Zn replaced by Co is near 50% or higher.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

Abstract

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Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

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Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

Abstract

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Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

Cite this