Cooling effects of field emission from semiconductors at high temperatures

Moon S. Chung, Alexander Mayer, Brock L. Weiss, Nicholas M. Miskovsky, Paul H. Cutler

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.

langue originaleAnglais
titreProceedings - IVNC 2011
Sous-titre2011 24th International Vacuum Nanoelectronics Conference
Pages5-6
Nombre de pages2
étatPublié - 22 sept. 2011
Evénement2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Allemagne
Durée: 18 juil. 201122 juil. 2011

Série de publications

NomProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Une conférence

Une conférence2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
PaysAllemagne
La villeWuppertal
période18/07/1122/07/11

Empreinte digitale

Field emission
Semiconductor materials
Cooling
Temperature
Temperature distribution
Cathodes

Citer ceci

Chung, M. S., Mayer, A., Weiss, B. L., Miskovsky, N. M., & Cutler, P. H. (2011). Cooling effects of field emission from semiconductors at high temperatures. Dans Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference (p. 5-6). [6004534] (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).
Chung, Moon S. ; Mayer, Alexander ; Weiss, Brock L. ; Miskovsky, Nicholas M. ; Cutler, Paul H. / Cooling effects of field emission from semiconductors at high temperatures. Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference. 2011. p. 5-6 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).
@inproceedings{30e6b33cf21e4c67b9e601f1637f7b21,
title = "Cooling effects of field emission from semiconductors at high temperatures",
abstract = "We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.",
keywords = "Cooling, Field emission, Nottingham effect",
author = "Chung, {Moon S.} and Alexander Mayer and Weiss, {Brock L.} and Miskovsky, {Nicholas M.} and Cutler, {Paul H.}",
year = "2011",
month = "9",
day = "22",
language = "English",
isbn = "9783000350818",
series = "Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference",
pages = "5--6",
booktitle = "Proceedings - IVNC 2011",

}

Chung, MS, Mayer, A, Weiss, BL, Miskovsky, NM & Cutler, PH 2011, Cooling effects of field emission from semiconductors at high temperatures. Dans Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference., 6004534, Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference, p. 5-6, 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011, Wuppertal, Allemagne, 18/07/11.

Cooling effects of field emission from semiconductors at high temperatures. / Chung, Moon S.; Mayer, Alexander; Weiss, Brock L.; Miskovsky, Nicholas M.; Cutler, Paul H.

Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference. 2011. p. 5-6 6004534 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Cooling effects of field emission from semiconductors at high temperatures

AU - Chung, Moon S.

AU - Mayer, Alexander

AU - Weiss, Brock L.

AU - Miskovsky, Nicholas M.

AU - Cutler, Paul H.

PY - 2011/9/22

Y1 - 2011/9/22

N2 - We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.

AB - We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.

KW - Cooling

KW - Field emission

KW - Nottingham effect

UR - http://www.scopus.com/inward/record.url?scp=80052901040&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:80052901040

SN - 9783000350818

T3 - Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

SP - 5

EP - 6

BT - Proceedings - IVNC 2011

ER -

Chung MS, Mayer A, Weiss BL, Miskovsky NM, Cutler PH. Cooling effects of field emission from semiconductors at high temperatures. Dans Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference. 2011. p. 5-6. 6004534. (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).