Cooling effects of field emission from semiconductors at high temperatures

Moon S. Chung, Alexander Mayer, Brock L. Weiss, Nicholas M. Miskovsky, Paul H. Cutler

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

Abstract

We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.

Original languageEnglish
Title of host publicationProceedings - IVNC 2011
Subtitle of host publication2011 24th International Vacuum Nanoelectronics Conference
Pages5-6
Number of pages2
Publication statusPublished - 22 Sep 2011
Event2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany
Duration: 18 Jul 201122 Jul 2011

Publication series

NameProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Conference

Conference2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
Country/TerritoryGermany
CityWuppertal
Period18/07/1122/07/11

Keywords

  • Cooling
  • Field emission
  • Nottingham effect

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