Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu; D.A. Yarekha; E. Dubois; D. Deresmes; N. Breil; N. Reckinger; X. Tang; A. Halimaoui

doi:10.1149/1.3117410

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, D.A. Yarekha, E. Dubois, D. Deresmes, N. Breil, N. Reckinger, X. Tang, A. Halimaoui

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.

Original language	English
Title of host publication	ECS Transactions
Pages	201-207
Number of pages	7
Volume	19
DOIs	https://doi.org/10.1149/1.3117410
Publication status	Published - 1 Jan 2009

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AU - Deresmes, D.

AU - Breil, N.

AU - Reckinger, N.

AU - Tang, X.

AU - Halimaoui, A.

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AB - The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.

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Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

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