Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, D.A. Yarekha, E. Dubois, D. Deresmes, N. Breil, N. Reckinger, X. Tang, A. Halimaoui

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.
langue originaleAnglais
titreECS Transactions
Pages201-207
Nombre de pages7
Volume19
Les DOIs
étatPublié - 1 janv. 2009

Empreinte digitale

SOI (semiconductors)
rare earth elements
silicides
ytterbium
erbium
field effect transistors
defects
temperature

Citer ceci

Larrieu, G., Yarekha, D. A., Dubois, E., Deresmes, D., Breil, N., Reckinger, N., ... Halimaoui, A. (2009). Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Dans ECS Transactions (Vol 19, p. 201-207) https://doi.org/10.1149/1.3117410
Larrieu, G. ; Yarekha, D.A. ; Dubois, E. ; Deresmes, D. ; Breil, N. ; Reckinger, N. ; Tang, X. ; Halimaoui, A. / Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. ECS Transactions. Vol 19 2009. p. 201-207
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Larrieu, G, Yarekha, DA, Dubois, E, Deresmes, D, Breil, N, Reckinger, N, Tang, X & Halimaoui, A 2009, Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Dans ECS Transactions. VOL. 19, p. 201-207. https://doi.org/10.1149/1.3117410

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. / Larrieu, G.; Yarekha, D.A.; Dubois, E.; Deresmes, D.; Breil, N.; Reckinger, N.; Tang, X.; Halimaoui, A.

ECS Transactions. Vol 19 2009. p. 201-207.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

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Larrieu G, Yarekha DA, Dubois E, Deresmes D, Breil N, Reckinger N et al. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Dans ECS Transactions. Vol 19. 2009. p. 201-207 https://doi.org/10.1149/1.3117410