Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, D.A. Yarekha, E. Dubois, D. Deresmes, N. Breil, N. Reckinger, X. Tang, A. Halimaoui

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Résumé

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.
langue originaleAnglais
titreECS Transactions
Pages201-207
Nombre de pages7
Volume19
Les DOIs
Etat de la publicationPublié - 1 janv. 2009

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Contient cette citation

Larrieu, G., Yarekha, D. A., Dubois, E., Deresmes, D., Breil, N., Reckinger, N., Tang, X., & Halimaoui, A. (2009). Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Dans ECS Transactions (Vol 19, p. 201-207) https://doi.org/10.1149/1.3117410