Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu; D.A. Yarekha; E. Dubois; D. Deresmes; N. Breil; N. Reckinger; X. Tang; A. Halimaoui

doi:10.1149/1.3117410

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, D.A. Yarekha, E. Dubois, D. Deresmes, N. Breil, N. Reckinger, X. Tang, A. Halimaoui

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférence › Article dans les actes d'une conférence/un colloque

Résumé

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.

langue originale	Anglais
titre	ECS Transactions
Pages	201-207
Nombre de pages	7
Volume	19
Les DOIs	https://doi.org/10.1149/1.3117410
Etat de la publication	Publié - 1 janv. 2009

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AU - Breil, N.

AU - Reckinger, N.

AU - Tang, X.

AU - Halimaoui, A.

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AB - The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.

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Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

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