Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS

Laurent Houssiau, Céline Noël, Nicolas Mine, K. W. Jung, W. J. Min, D. W. Moon

    Research output: Contribution to journalArticlepeer-review


    In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe.

    Original languageEnglish
    Pages (from-to)22-24
    Number of pages3
    JournalSurface and interface analysis
    Issue numberS1
    Publication statusPublished - 2014


    • Cesium
    • Depth profiling
    • MEIS
    • Phenylalanine
    • Silicon
    • SIMS
    • TOF-MEIS
    • ToF-SIMS


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