Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS

Laurent Houssiau, Céline Noël, Nicolas Mine, K. W. Jung, W. J. Min, D. W. Moon

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe.

langue originaleAnglais
Pages (de - à)22-24
Nombre de pages3
journalSurface and interface analysis
Volume46
Numéro de publicationS1
Les DOIs
étatPublié - 2014

Empreinte digitale

phenylalanine
Secondary ion mass spectrometry
Ion bombardment
Phenylalanine
secondary ion mass spectrometry
surface layers
bombardment
fluence
wafers
Silicon
ions
Ions
silicon

Citer ceci

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title = "Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS",
abstract = "In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe.",
keywords = "Cesium, Depth profiling, MEIS, Phenylalanine, Silicon, SIMS, TOF-MEIS, ToF-SIMS",
author = "Laurent Houssiau and C{\'e}line No{\"e}l and Nicolas Mine and Jung, {K. W.} and Min, {W. J.} and Moon, {D. W.}",
year = "2014",
doi = "10.1002/sia.5614",
language = "English",
volume = "46",
pages = "22--24",
journal = "Surface and interface analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
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Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS. / Houssiau, Laurent; Noël, Céline; Mine, Nicolas; Jung, K. W.; Min, W. J.; Moon, D. W.

Dans: Surface and interface analysis, Vol 46, Numéro S1, 2014, p. 22-24.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS

AU - Houssiau, Laurent

AU - Noël, Céline

AU - Mine, Nicolas

AU - Jung, K. W.

AU - Min, W. J.

AU - Moon, D. W.

PY - 2014

Y1 - 2014

N2 - In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe.

AB - In this report, cesiumsurface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) sampleswere analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ∼0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe.

KW - Cesium

KW - Depth profiling

KW - MEIS

KW - Phenylalanine

KW - Silicon

KW - SIMS

KW - TOF-MEIS

KW - ToF-SIMS

UR - http://www.scopus.com/inward/record.url?scp=84912118424&partnerID=8YFLogxK

U2 - 10.1002/sia.5614

DO - 10.1002/sia.5614

M3 - Article

AN - SCOPUS:84912118424

VL - 46

SP - 22

EP - 24

JO - Surface and interface analysis

JF - Surface and interface analysis

SN - 0142-2421

IS - S1

ER -