An electrical evaluation method for the silicidation of silicon nanowires

X. Tang; N. Reckinger; V. Bayot; D. Flandre; E. Dubois; D.A. Yarekha; G. Larrieu; A. Lecestre; J. Ratajczak; N. Breil; V. Passi; J.-P. Raskin

doi:10.1063/1.3171929

An electrical evaluation method for the silicidation of silicon nanowires

X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D.A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, J.-P. Raskin

Research output: Contribution to journal › Article › peer-review

Abstract

Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.

Original language	English
Journal	Applied Physics Letters
Volume	95
Issue number	2
DOIs	https://doi.org/10.1063/1.3171929
Publication status	Published - 1 Jan 2009

Access to Document

10.1063/1.3171929

Cite this

@article{e5b84a95bbdf4d8a8f2d1070bf938aae,

title = "An electrical evaluation method for the silicidation of silicon nanowires",

abstract = "Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.",

author = "X. Tang and N. Reckinger and V. Bayot and D. Flandre and E. Dubois and D.A. Yarekha and G. Larrieu and A. Lecestre and J. Ratajczak and N. Breil and V. Passi and J.-P. Raskin",

year = "2009",

month = jan,

day = "1",

doi = "10.1063/1.3171929",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - An electrical evaluation method for the silicidation of silicon nanowires

AU - Tang, X.

AU - Reckinger, N.

AU - Bayot, V.

AU - Flandre, D.

AU - Dubois, E.

AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Lecestre, A.

AU - Ratajczak, J.

AU - Breil, N.

AU - Passi, V.

AU - Raskin, J.-P.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.

AB - Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.

UR - http://www.scopus.com/inward/record.url?scp=67650723671&partnerID=8YFLogxK

U2 - 10.1063/1.3171929

DO - 10.1063/1.3171929

M3 - Article

AN - SCOPUS:67650723671

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

An electrical evaluation method for the silicidation of silicon nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this