An electrical evaluation method for the silicidation of silicon nanowires

X. Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, D.A. Yarekha, G. Larrieu, A. Lecestre, J. Ratajczak, N. Breil, V. Passi, J.-P. Raskin

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    Physical and electrical properties of PtSi nanowires (NWs) fabricated on a silicon-on-insulator wafer are investigated. The Si consumption rule in NW silicidation is consistent with that of planar process. The cross-sectional area ratio between PtSi NW and Si NW is about 1.5:1. An electrical method is used to evaluate the silicidation degree of NWs. According to the dependence of the current passing through the NW on the backside substrate voltage, we can determine whether the Si NW is fully or partially silicided. The electrical evaluation results are in agreement with transmission electron microscopy inspections.
    langue originaleAnglais
    journalApplied Physics Letters
    Volume95
    Numéro de publication2
    Les DOIs
    Etat de la publicationPublié - 1 janv. 2009

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