Silicon nanocrystal synthesis by implantation of natural Si isotopes

David Barba, Dimitri Koshel, François Martin, Guy G. Ross, Martin Chicoine, François Schiettekatte, Mourad Yedji, Julien Demarche, Guy Terwagne

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs


    Implantations of pure , , and into SiO2 can provide significant insight into the formation of silicon nanocrystals (Si-nc) and their light emission properties. Si-nc produced with different fractions of the heavier Si isotopes have been characterized by Raman and photoluminescence spectroscopy. Weak Stokes shifts of the Si-nc phonon peaks indicate that both the implanted Si and the native Si from the SiO2 substrate contribute to Si-nc nucleation. The Raman measurements also indicate that the Si isotopic composition of the Si-nc is similar to the Si isotopic fraction of the implanted SiO2. The Si-nc photoluminescence (PL) spectra are shifted towards the blue with increasing Si isotope mass, an indication that the increase of the Si-nc effective mass enhances the excitonic bandgap. Measurements from samples implanted with heavy isotopes at high Si excess concentrations indicate that the Si-nc isotope fraction evolves with annealing time such that the heaviest Si isotope are more concentrated in the vicinity of the Si-nc/SiO2 interface, which can modify the energy states involved in the radiative transitions associated with Si-nc.
    langue originaleAnglais
    Pages (de - à)669-673
    Nombre de pages5
    journalJournal of Luminescence
    Etat de la publicationPublié - 2009

    Contient cette citation