Optimisation and simulation of an alternative nano-flash memory: The SASEM device

C. Krzeminski; E. Dubois; X. Tang; N. Reckinger; A. Crahay; V. Bayot

Optimisation and simulation of an alternative nano-flash memory: The SASEM device

C. Krzeminski, E. Dubois, X. Tang, N. Reckinger, A. Crahay, V. Bayot

Résultats de recherche: Contribution à un journal/une revue › Résumé d'une communication scientifique › Revue par des pairs

Résumé

Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

langue originale	Anglais
Pages (de - à)	45-50
Nombre de pages	6
journal	Materials Research Society Symposium Proceedings
Volume	830
Etat de la publication	Publié - 1 janv. 2005

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title = "Optimisation and simulation of an alternative nano-flash memory: The SASEM device",

abstract = "Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.",

author = "C. Krzeminski and E. Dubois and X. Tang and N. Reckinger and A. Crahay and V. Bayot",

year = "2005",

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T2 - The SASEM device

AU - Krzeminski, C.

AU - Dubois, E.

AU - Tang, X.

AU - Reckinger, N.

AU - Crahay, A.

AU - Bayot, V.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

AB - Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

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M3 - Meeting abstract

AN - SCOPUS:20344364154

SN - 0272-9172

VL - 830

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EP - 50

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

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Optimisation and simulation of an alternative nano-flash memory: The SASEM device

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