Abstract
Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
Original language | English |
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Pages (from-to) | 45-50 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 830 |
Publication status | Published - 1 Jan 2005 |