Optimisation and simulation of an alternative nano-flash memory: The SASEM device

C. Krzeminski, E. Dubois, X. Tang, N. Reckinger, A. Crahay, V. Bayot

    Research output: Contribution to journalMeeting abstractpeer-review

    Abstract

    Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
    Original languageEnglish
    Pages (from-to)45-50
    Number of pages6
    JournalMaterials Research Society Symposium Proceedings
    Volume830
    Publication statusPublished - 1 Jan 2005

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