Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

M.D. Lange; Robert Sporken; K.K. Mahavadi; J.P.  Faurie; N. Otsuka; Y. Nakamura

doi:10.1063/1.105041

Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

M.D. Lange, Robert Sporken, K.K. Mahavadi, J.P. Faurie, N. Otsuka, Y. Nakamura

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Résumé

CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01̄1]//GaAs[01̄1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01̄1]//GaAs[01̄1] and CdTe[61̄1̄]//GaAs[1̄11].

langue originale	Anglais
Pages (de - à)	1988-1990
journal	Applied Physics Letters
Volume	58
Numéro de publication	18
Les DOIs	https://doi.org/10.1063/1.105041
Etat de la publication	Publié - 1991

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10.1063/1.105041

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@article{5978d77e657046318d8ac384b4a6179e,

title = "Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates",

abstract = "CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[0{\=1}1]//GaAs[0{\=1}1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[0{\=1}1]//GaAs[0{\=1}1] and CdTe[6{\=1}{\=1}]//GaAs[{\=1}11].",

author = "M.D. Lange and Robert Sporken and K.K. Mahavadi and J.P. Faurie and N. Otsuka and Y. Nakamura",

year = "1991",

doi = "10.1063/1.105041",

language = "English",

volume = "58",

pages = "1988--1990",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

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TY - JOUR

T1 - Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

AU - Lange, M.D.

AU - Sporken, Robert

AU - Mahavadi, K.K.

AU - Faurie, J.P.

AU - Otsuka, N.

AU - Nakamura, Y.

PY - 1991

Y1 - 1991

N2 - CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01̄1]//GaAs[01̄1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01̄1]//GaAs[01̄1] and CdTe[61̄1̄]//GaAs[1̄11].

AB - CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01̄1]//GaAs[01̄1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01̄1]//GaAs[01̄1] and CdTe[61̄1̄]//GaAs[1̄11].

U2 - 10.1063/1.105041

DO - 10.1063/1.105041

M3 - Article

SN - 0003-6951

VL - 58

SP - 1988

EP - 1990

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

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