Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

M.D. Lange, Robert Sporken, K.K. Mahavadi, J.P. Faurie, N. Otsuka, Y. Nakamura

    Research output: Contribution to journalArticlepeer-review

    Abstract

    CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01̄1]//GaAs[01̄1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01̄1]//GaAs[01̄1] and CdTe[61̄1̄]//GaAs[1̄11].
    Original languageEnglish
    Pages (from-to)1988-1990
    JournalApplied Physics Letters
    Volume58
    Issue number18
    DOIs
    Publication statusPublished - 1991

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