Résumé
We report on the MOVPE growth and characterization of high quality AlGaInAs alloys and their interfaces with InP. The AlGaInAs alloy grown on InP presents a type-II staggered bandgap-lineup interface, for Al alloy composition between 20% and 48%. This interface presents a very intense photoluminescence peak which corresponds to a high efficiency electron-hole pair recombination mechanism. The corresponding 77K interface band gap energy is between 1.1 and 1.2 eV (≈20%
langue originale | Anglais |
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Pages (de - à) | 589-595 |
Nombre de pages | 7 |
journal | Journal of Crystal Growth |
Volume | 124 |
Numéro de publication | 1-4 |
Les DOIs | |
Etat de la publication | Publié - 1992 |