Growth and Characterisation of TypeII/TypeI AlGaInAs/InP Interfaces

M. A. Sacilotti; P. Motisuke; Y. Monteil; P. Abraham; F. Iikawa; Carla Bittencourt Papaleo Montes; M. Furtado; L. Horiuchi; R. Landers; J. Morais; L. Cardoso; J. Decordet; B. Waldman

doi:10.1016/0022-0248(92)90522-K

Growth and Characterisation of TypeII/TypeI AlGaInAs/InP Interfaces

M. A. Sacilotti, P. Motisuke, Y. Monteil, P. Abraham, F. Iikawa, Carla Bittencourt Papaleo Montes, M. Furtado, L. Horiuchi, R. Landers, J. Morais, L. Cardoso, J. Decordet, B. Waldman

Research output: Contribution to journal › Article

Abstract

We report on the MOVPE growth and characterization of high quality AlGaInAs alloys and their interfaces with InP. The AlGaInAs alloy grown on InP presents a type-II staggered bandgap-lineup interface, for Al alloy composition between 20% and 48%. This interface presents a very intense photoluminescence peak which corresponds to a high efficiency electron-hole pair recombination mechanism. The corresponding 77K interface band gap energy is between 1.1 and 1.2 eV (≈20%

Original language	English
Pages (from-to)	589-595
Number of pages	7
Journal	Journal of Crystal Growth
Volume	124
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90522-K
Publication status	Published - 1992

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title = "Growth and Characterisation of TypeII/TypeI AlGaInAs/InP Interfaces",

abstract = "We report on the MOVPE growth and characterization of high quality AlGaInAs alloys and their interfaces with InP. The AlGaInAs alloy grown on InP presents a type-II staggered bandgap-lineup interface, for Al alloy composition between 20% and 48%. This interface presents a very intense photoluminescence peak which corresponds to a high efficiency electron-hole pair recombination mechanism. The corresponding 77K interface band gap energy is between 1.1 and 1.2 eV (≈20% ",

author = "Sacilotti, {M. A.} and P. Motisuke and Y. Monteil and P. Abraham and F. Iikawa and {Bittencourt Papaleo Montes}, Carla and M. Furtado and L. Horiuchi and R. Landers and J. Morais and L. Cardoso and J. Decordet and B. Waldman",

year = "1992",

doi = "10.1016/0022-0248(92)90522-K",

language = "English",

volume = "124",

pages = "589--595",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Growth and Characterisation of TypeII/TypeI AlGaInAs/InP Interfaces

AU - Sacilotti, M. A.

AU - Motisuke, P.

AU - Monteil, Y.

AU - Abraham, P.

AU - Iikawa, F.

AU - Bittencourt Papaleo Montes, Carla

AU - Furtado, M.

AU - Horiuchi, L.

AU - Landers, R.

AU - Morais, J.

AU - Cardoso, L.

AU - Decordet, J.

AU - Waldman, B.

PY - 1992

Y1 - 1992

N2 - We report on the MOVPE growth and characterization of high quality AlGaInAs alloys and their interfaces with InP. The AlGaInAs alloy grown on InP presents a type-II staggered bandgap-lineup interface, for Al alloy composition between 20% and 48%. This interface presents a very intense photoluminescence peak which corresponds to a high efficiency electron-hole pair recombination mechanism. The corresponding 77K interface band gap energy is between 1.1 and 1.2 eV (≈20%

AB - We report on the MOVPE growth and characterization of high quality AlGaInAs alloys and their interfaces with InP. The AlGaInAs alloy grown on InP presents a type-II staggered bandgap-lineup interface, for Al alloy composition between 20% and 48%. This interface presents a very intense photoluminescence peak which corresponds to a high efficiency electron-hole pair recombination mechanism. The corresponding 77K interface band gap energy is between 1.1 and 1.2 eV (≈20%

U2 - 10.1016/0022-0248(92)90522-K

DO - 10.1016/0022-0248(92)90522-K

M3 - Article

SN - 0022-0248

VL - 124

SP - 589

EP - 595

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth and Characterisation of TypeII/TypeI AlGaInAs/InP Interfaces

Abstract

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