Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

X. Tang; C. Krzeminski; A. Lecavelier Des Etangs-Levallois; Z. Chen; E. Dubois; E. Kasper; A. Karmous; N. Reckinger; D. Flandre; L.A. Francis; J.-P. Colinge; J.-P. Raskin

doi:10.1021/nl202434k

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

X. Tang, C. Krzeminski, A. Lecavelier Des Etangs-Levallois, Z. Chen, E. Dubois, E. Kasper, A. Karmous, N. Reckinger, D. Flandre, L.A. Francis, J.-P. Colinge, J.-P. Raskin

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Résumé

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

langue originale	Anglais
Pages (de - à)	4520-4526
Nombre de pages	7
journal	Nano Letters
Volume	11
Numéro de publication	11
Les DOIs	https://doi.org/10.1021/nl202434k
Etat de la publication	Publié - 9 nov. 2011

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10.1021/nl202434k

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Tang, X., Krzeminski, C., Lecavelier Des Etangs-Levallois, A., Chen, Z., Dubois, E., Kasper, E., Karmous, A., Reckinger, N., Flandre, D., Francis, L. A., Colinge, J.-P., & Raskin, J.-P. (2011). Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories. Nano Letters, 11(11), 4520-4526. https://doi.org/10.1021/nl202434k

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title = "Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories",

abstract = "We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.",

author = "X. Tang and C. Krzeminski and {Lecavelier Des Etangs-Levallois}, A. and Z. Chen and E. Dubois and E. Kasper and A. Karmous and N. Reckinger and D. Flandre and L.A. Francis and J.-P. Colinge and J.-P. Raskin",

year = "2011",

month = nov,

day = "9",

doi = "10.1021/nl202434k",

language = "English",

volume = "11",

pages = "4520--4526",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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Tang, X, Krzeminski, C, Lecavelier Des Etangs-Levallois, A, Chen, Z, Dubois, E, Kasper, E, Karmous, A, Reckinger, N, Flandre, D, Francis, LA, Colinge, J-P & Raskin, J-P 2011, 'Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories', Nano Letters, VOL. 11, Numéro 11, p. 4520-4526. https://doi.org/10.1021/nl202434k

TY - JOUR

T1 - Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

AU - Tang, X.

AU - Krzeminski, C.

AU - Lecavelier Des Etangs-Levallois, A.

AU - Chen, Z.

AU - Dubois, E.

AU - Kasper, E.

AU - Karmous, A.

AU - Reckinger, N.

AU - Flandre, D.

AU - Francis, L.A.

AU - Colinge, J.-P.

AU - Raskin, J.-P.

PY - 2011/11/9

Y1 - 2011/11/9

N2 - We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

AB - We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

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U2 - 10.1021/nl202434k

DO - 10.1021/nl202434k

M3 - Article

AN - SCOPUS:80755159153

SN - 1530-6984

VL - 11

SP - 4520

EP - 4526

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

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