Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

X. Tang, C. Krzeminski, A. Lecavelier Des Etangs-Levallois, Z. Chen, E. Dubois, E. Kasper, A. Karmous, N. Reckinger, D. Flandre, L.A. Francis, J.-P. Colinge, J.-P. Raskin

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.
    Original languageEnglish
    Pages (from-to)4520-4526
    Number of pages7
    JournalNano Letters
    Volume11
    Issue number11
    DOIs
    Publication statusPublished - 9 Nov 2011

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