Vanadium nitride (VN) thin films were produced via direct-current reactive magnetron sputtering technique followed by vacuum annealing. The treatment was carried out at different temperatures for any effect on their electrochemical (EC) stability, up to 10,000 charge-discharge cycles in 0.5 M K2SO4 solution. The film surface chemistry was investigated by using X-ray photoelectron spectroscope (XPS) and cyclic voltammetry (CV) techniques. For the as-deposited film, the oxide layer formed on the VN surface was unstable upon K2SO4 immersion treatment, along with ~23% reduction in the EC capacitance. Vacuum annealing under optimized conditions, however, made the oxide layer stable with almost no capacitance loss upon cycling for up to 10,000 cycles. Annealing treatment of the VN films makes them a potential candidate for long-term use in electrochemical capacitors.