Résumé
The interaction of Co thin films on atomically flat ZnO(000–1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer–Weber growth of these islands is observed. Upon annealing at 600 °C, an atomically flat surface (Zn,Co)O(000–1) is restored due to the diffusion of the Co into the semiconductor.
langue originale | Anglais |
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Pages (de - à) | 111-117 |
Nombre de pages | 7 |
journal | Applied Physics A |
Volume | 88 |
Les DOIs | |
Etat de la publication | Publié - 2007 |
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