Certified ion implantation fluence by high accuracy RBS

Julien L. Colaux, Chris Jeynes, Keith C. Heasman, Russell M. Gwilliam

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Résumé

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

langue originaleAnglais
Pages (de - à)3251-3261
Nombre de pages11
journalAnalyst
Volume140
Numéro de publication9
Les DOIs
Etat de la publicationPublié - 7 mai 2015
Modification externeOui

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    Colaux, J. L., Jeynes, C., Heasman, K. C., & Gwilliam, R. M. (2015). Certified ion implantation fluence by high accuracy RBS. Analyst, 140(9), 3251-3261. https://doi.org/10.1039/c4an02316a