Abstract
Transition metal di-chalcogenides (TMDCs) are materials that have a direct bandgap in their 2D form. Therefore, they can be used in the field of electronics for applications like the production of LEDs or transistors.In this work, we calculated the band structures of several 2D TMDCs (MX2 with M=Mo or W; X=S, Se or Te). We also simulated the band structures and magnetism for different grain boundary geometries (MTBs) for the MoTe2 and MoSe2 cases. For the latter one, we have simulated STM images for those boundaries. From band structure calculations and partial density of states analysis of lateral MoSe2/WSe2 and MoTe2/WTe2 heterojunctions, we concluded that MTBs located at the heterojunction’s boundaries can modify the band alignment through those structures.
Date of Award | 24 Jan 2019 |
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Original language | French |
Awarding Institution |
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Supervisor | Luc Henrard (Supervisor) |