The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

Trung T. Pham, Cristiane N. Santos, Frédéric Joucken, Benoît Hackens, Jean Pierre Raskin, Robert Sporken

Research output: Contribution to journalArticle

Abstract

In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of graphene on Si(111) via direct deposition of solid-state carbon atoms in ultra-high vacuum. Therefore, various thicknesses of the SiC layer preformed on the Si substrates were produced in order to evaluate its influence on the quality of graphene formation at different substrate temperatures from 900 °C to 1100 °C. At a given temperature of 1100 °C, we found that a thicker SiC layer can suppress silicon-out diffusion from the substrate and improve the structural quality of the graphene layer. The samples were analyzed by low energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, and scanning tunneling microscopy.

Original languageEnglish
Pages (from-to)141-148
Number of pages8
JournalDiamond and Related Materials
Volume66
DOIs
Publication statusPublished - 1 Jun 2016

Fingerprint

Graphite
Diffusion barriers
Graphene
graphene
Substrates
Low energy electron diffraction
Ultrahigh vacuum
Scanning tunneling microscopy
Silicon
Auger electron spectroscopy
Photoelectron spectroscopy
X ray spectroscopy
ultrahigh vacuum
Auger spectroscopy
electron spectroscopy
Raman spectroscopy
scanning tunneling microscopy
photoelectric emission
Carbon
electron diffraction

Keywords

  • Electron beam evaporation
  • Graphene on Si
  • Graphitic carbon
  • Si(111) substrate

Cite this

Pham, Trung T. ; Santos, Cristiane N. ; Joucken, Frédéric ; Hackens, Benoît ; Raskin, Jean Pierre ; Sporken, Robert. / The role of SiC as a diffusion barrier in the formation of graphene on Si(111). In: Diamond and Related Materials. 2016 ; Vol. 66. pp. 141-148.
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The role of SiC as a diffusion barrier in the formation of graphene on Si(111). / Pham, Trung T.; Santos, Cristiane N.; Joucken, Frédéric; Hackens, Benoît; Raskin, Jean Pierre; Sporken, Robert.

In: Diamond and Related Materials, Vol. 66, 01.06.2016, p. 141-148.

Research output: Contribution to journalArticle

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T1 - The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

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AU - Santos, Cristiane N.

AU - Joucken, Frédéric

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