The Fe/Si multilayers structure was grown by direct current magnetron sputtering technique and was studied by means of X-ray photoelectron spectroscopy. The iron silicide formation at the oxidized Fe/Si interface is inhibited at room and elevated temperatures and it occurs at T500 °C. The prolonged annealing of the Fe/Si interface to 500 °C leads to the steady growth of the Si3+ and Si4+ oxygen-related components in the sample.
|Number of pages||4|
|Journal||Journal of alloys and Compounds|
|Publication status||Published - 2004|
- X-Ray photoelectron spectroscopy; Iron; Silicides; Silicon oxides; Fe?x2013;Si interface