Abstract
The Fe/Si multilayers structure was grown by direct current magnetron sputtering technique and was studied by means of X-ray photoelectron spectroscopy. The iron silicide formation at the oxidized Fe/Si interface is inhibited at room and elevated temperatures and it occurs at T500 °C. The prolonged annealing of the Fe/Si interface to 500 °C leads to the steady growth of the Si3+ and Si4+ oxygen-related components in the sample.
Original language | English |
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Pages (from-to) | 202-205 |
Number of pages | 4 |
Journal | Journal of alloys and Compounds |
Volume | 362 |
Publication status | Published - 2004 |
Keywords
- X-Ray photoelectron spectroscopy; Iron; Silicides; Silicon oxides; Fe?x2013;Si interface