Résumé
The Fe/Si multilayers structure was grown by direct current magnetron sputtering technique and was studied by means of X-ray photoelectron spectroscopy. The iron silicide formation at the oxidized Fe/Si interface is inhibited at room and elevated temperatures and it occurs at T500 °C. The prolonged annealing of the Fe/Si interface to 500 °C leads to the steady growth of the Si3+ and Si4+ oxygen-related components in the sample.
langue originale | Anglais |
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Pages (de - à) | 202-205 |
Nombre de pages | 4 |
journal | Journal of alloys and Compounds |
Volume | 362 |
Etat de la publication | Publié - 2004 |