Abstract
The densification process by ion-assisted physical vapour deposition of films is considered as a consequence of rearrangement of atoms in the near-surface film layer. A model is proposed allowing the quantitative estimate of the optimum ion current density required to produce a film with maximum density.
Original language | English |
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Pages (from-to) | 399-401 |
Journal | Applied physics. A: Materials science and processing |
Volume | 63 |
DOIs | |
Publication status | Published - 1996 |