Inverse photoemission spectroscopy of GaSe and InSe

Robert Sporken, Rachid HAFSI, François COLETTI, Jean-Marie DEBEVER, Paul Thiry, A. CHEVY

    Research output: Contribution to journalArticle

    Abstract

    The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.
    Original languageEnglish
    Pages (from-to)11093-11099
    Number of pages7
    JournalPhysical review. B, Condensed matter
    Volume49
    Issue number16
    DOIs
    Publication statusPublished - 1994

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