Inverse photoemission spectroscopy of GaSe and InSe

Robert Sporken; Rachid HAFSI; François COLETTI; Jean-Marie DEBEVER; Paul Thiry; A. CHEVY

doi:10.1103/PhysRevB.49.11093

Inverse photoemission spectroscopy of GaSe and InSe

Robert Sporken, Rachid HAFSI, François COLETTI, Jean-Marie DEBEVER, Paul Thiry, A. CHEVY

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Résumé

The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.

langue originale	Anglais
Pages (de - à)	11093-11099
Nombre de pages	7
journal	Physical review. B, Condensed matter
Volume	49
Numéro de publication	16
Les DOIs	https://doi.org/10.1103/PhysRevB.49.11093
Etat de la publication	Publié - 1994

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10.1103/PhysRevB.49.11093

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title = "Inverse photoemission spectroscopy of GaSe and InSe",

abstract = "The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.",

author = "Robert Sporken and Rachid HAFSI and Fran{\c c}ois COLETTI and Jean-Marie DEBEVER and Paul Thiry and A. CHEVY",

year = "1994",

doi = "10.1103/PhysRevB.49.11093",

language = "English",

volume = "49",

pages = "11093--11099",

journal = "Physical review. B, Condensed matter",

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publisher = "American institute of physics",

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T1 - Inverse photoemission spectroscopy of GaSe and InSe

AU - Sporken, Robert

AU - HAFSI, Rachid

AU - COLETTI, François

AU - DEBEVER, Jean-Marie

AU - Thiry, Paul

AU - CHEVY, A.

PY - 1994

Y1 - 1994

N2 - The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.

AB - The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.

U2 - 10.1103/PhysRevB.49.11093

DO - 10.1103/PhysRevB.49.11093

M3 - Article

SN - 0163-1829

VL - 49

SP - 11093

EP - 11099

JO - Physical review. B, Condensed matter

JF - Physical review. B, Condensed matter

IS - 16

ER -

Inverse photoemission spectroscopy of GaSe and InSe

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