16th International Vacuum congress (IVC-16)

Houssiau, L. (Contributor)

Activity: Participating in or organising an event typesParticipation in conference


Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer, communication orale. Co-auteurs : R.G. Vitchev, J.-J. Pireaux, T. Conard et
Period28 Jun 20042 Jul 2004
Event typeConference
LocationVenise, Italie