TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak; A. ŁAszcz; A. Czerwinski; J. Katcki; X. Tang; N. Reckinger; D.A. Yarekha; G. Larrieu; E. Dubois

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, A. ŁAszcz, A. Czerwinski, J. Katcki, X. Tang, N. Reckinger, D.A. Yarekha, G. Larrieu, E. Dubois

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférence › Article dans les actes d'une conférence/un colloque

Résumé

The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

langue originale	Anglais
titre	Acta Phys. Pol. A
Volume	116
Etat de la publication	Publié - 1 janv. 2009

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title = "TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs",

abstract = "The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.",

author = "J. Ratajczak and A. {\L}Aszcz and A. Czerwinski and J. Katcki and X. Tang and N. Reckinger and D.A. Yarekha and G. Larrieu and E. Dubois",

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T1 - TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

AU - Ratajczak, J.

AU - ŁAszcz, A.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Tang, X.

AU - Reckinger, N.

AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

AB - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

UR - http://www.scopus.com/inward/record.url?scp=74849118211&partnerID=8YFLogxK

M3 - Conference contribution

VL - 116

BT - Acta Phys. Pol. A

ER -

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

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