TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, A. ŁAszcz, A. Czerwinski, J. Katcki, X. Tang, N. Reckinger, D.A. Yarekha, G. Larrieu, E. Dubois

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
langue originaleAnglais
titreActa Phys. Pol. A
Volume116
étatPublié - 1 janv. 2009

Empreinte digitale

fins
transmission electron microscopy
fabrication
manufacturing
optimization
silicon

Citer ceci

Ratajczak, J., ŁAszcz, A., Czerwinski, A., Katcki, J., Tang, X., Reckinger, N., ... Dubois, E. (2009). TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Dans Acta Phys. Pol. A (Vol 116)
Ratajczak, J. ; ŁAszcz, A. ; Czerwinski, A. ; Katcki, J. ; Tang, X. ; Reckinger, N. ; Yarekha, D.A. ; Larrieu, G. ; Dubois, E. / TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Acta Phys. Pol. A. Vol 116 2009.
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Ratajczak, J, ŁAszcz, A, Czerwinski, A, Katcki, J, Tang, X, Reckinger, N, Yarekha, DA, Larrieu, G & Dubois, E 2009, TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Dans Acta Phys. Pol. A. VOL. 116.

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. / Ratajczak, J.; ŁAszcz, A.; Czerwinski, A.; Katcki, J.; Tang, X.; Reckinger, N.; Yarekha, D.A.; Larrieu, G.; Dubois, E.

Acta Phys. Pol. A. Vol 116 2009.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

AU - Ratajczak, J.

AU - ŁAszcz, A.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Tang, X.

AU - Reckinger, N.

AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

AB - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

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M3 - Conference contribution

VL - 116

BT - Acta Phys. Pol. A

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Ratajczak J, ŁAszcz A, Czerwinski A, Katcki J, Tang X, Reckinger N et al. TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Dans Acta Phys. Pol. A. Vol 116. 2009