Abstract
We report on the electrical performance of silane-treated silicon nanowires configured as n+ - p - n+ field effect transistors. The functionalization of the silicon oxide shell with (3-aminopropyl)triethoxysilane controls the formation of the conduction channel in the trapezoidal cross-section nanowires. By carefully adjusting the surface conditioning protocol, robust electrical characteristics were achieved in terms of device-to-device reproducibility for the studied silicon nanowire transistors: the standard deviation displays a fourfold decrease for the threshold voltage together with a sevenfold improvement for the subthreshold slope.
Original language | English |
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Article number | 023502 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 2 |
Early online date | 13 Jan 2014 |
DOIs | |
Publication status | Published - 13 Jan 2014 |