Structural, electrical, and dielectric properties of sprayed tungsten-doped ZnO semiconductor

The structural, morphological, electrical, and dielectric properties of non-doped ZnO as well as ZnO doped with tungsten were investigated using advanced techniques such as sensitive XRD, XPS spectroscopy techniques, and SEM microscopes. The findings demonstrate that the incorporation of tungsten as a dopant in ZnO leads to enhanced properties characterized by reduced grain size and improved crystal lattice structure. To analyze the electrical and dielectric properties, ohmic contacts on the ZnO interface junctions were established, allowing for comprehensive studies following surface rectification. The task was done by current-voltage (I - V), capacitance-voltage (C - V), conductance-voltage (s - V), and the real ε' and imaginary ε'' components of the electrical permittivity across a range of voltages and frequencies. All these parameters were carried out using precise network analyzers, covering a voltage range of -6V to + 6V, and a frequency range of 10Hz to 10MHz. The obtained results exhibited outstanding performance, with activation energies measured at 0.49 eV, -0.83 eV, and 0.23 eV, respectively. Furthermore, we observed a significantly high permittivity value of 900 at low frequency, accompanied by distinct I-V characteristics. Notably, the I-V characteristic exhibited a notable increase at 0.6 volts, affirming the exceptional performance of tungsten-doped ZnO (WZO) and its suitability for a wide range of technological applications.