Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari; Robert Sporken; K AbuEl-Rub; David Smith; V. Metlushko; S. Sivananthan

doi:10.1116/1.1491992

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari, Robert Sporken, K AbuEl-Rub, David Smith, V. Metlushko, S. Sivananthan

Research output: Contribution to journal › Article

Abstract

Thin Fe films have been grown on Ge(001) substrates using molecular beam epitaxy, and the interface structure, electronic and magnetic properties have been studied. Cross-sectional transmission electron microscopy indicated that the substrates are uniformly covered by the Fe films, and x-ray photoemission spectroscopy did not show any evidence for reaction or intermixing at the interface. The growth did not appear to be affected by deposition of an As monolayer prior to Fe growth. Saturation magnetization measured for a 3.7 nm thick Fe layer on Ge(001) was close to the value for bulk Fe. The angular dependence of magnetization shows fourfold symmetry, typical of bcc Fe.

Original language	English
Pages (from-to)	1586-1590
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491992
Publication status	Published - 2002

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title = "Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties ",

abstract = "Thin Fe films have been grown on Ge(001) substrates using molecular beam epitaxy, and the interface structure, electronic and magnetic properties have been studied. Cross-sectional transmission electron microscopy indicated that the substrates are uniformly covered by the Fe films, and x-ray photoemission spectroscopy did not show any evidence for reaction or intermixing at the interface. The growth did not appear to be affected by deposition of an As monolayer prior to Fe growth. Saturation magnetization measured for a 3.7 nm thick Fe layer on Ge(001) was close to the value for bulk Fe. The angular dependence of magnetization shows fourfold symmetry, typical of bcc Fe.",

author = "S. Tari and Robert Sporken and K AbuEl-Rub and David Smith and V. Metlushko and S. Sivananthan",

year = "2002",

doi = "10.1116/1.1491992",

language = "English",

volume = "20",

pages = "1586--1590",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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TY - JOUR

T1 - Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy

T2 - Interface structure, electronic and magnetic properties

AU - Tari, S.

AU - Sporken, Robert

AU - AbuEl-Rub, K

AU - Smith, David

AU - Metlushko, V.

AU - Sivananthan, S.

PY - 2002

Y1 - 2002

N2 - Thin Fe films have been grown on Ge(001) substrates using molecular beam epitaxy, and the interface structure, electronic and magnetic properties have been studied. Cross-sectional transmission electron microscopy indicated that the substrates are uniformly covered by the Fe films, and x-ray photoemission spectroscopy did not show any evidence for reaction or intermixing at the interface. The growth did not appear to be affected by deposition of an As monolayer prior to Fe growth. Saturation magnetization measured for a 3.7 nm thick Fe layer on Ge(001) was close to the value for bulk Fe. The angular dependence of magnetization shows fourfold symmetry, typical of bcc Fe.

AB - Thin Fe films have been grown on Ge(001) substrates using molecular beam epitaxy, and the interface structure, electronic and magnetic properties have been studied. Cross-sectional transmission electron microscopy indicated that the substrates are uniformly covered by the Fe films, and x-ray photoemission spectroscopy did not show any evidence for reaction or intermixing at the interface. The growth did not appear to be affected by deposition of an As monolayer prior to Fe growth. Saturation magnetization measured for a 3.7 nm thick Fe layer on Ge(001) was close to the value for bulk Fe. The angular dependence of magnetization shows fourfold symmetry, typical of bcc Fe.

U2 - 10.1116/1.1491992

DO - 10.1116/1.1491992

M3 - Article

SN - 1071-1023

VL - 20

SP - 1586

EP - 1590

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

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