Characterization of large gap semiconductor materials for high temperature and high power electronics

Project: Research

Project Details

Description

High resolution electron energy loss, inverse and direct photoemission spectroscopies are used in a complementary manner to characterize surfaces of aluminum nitride and silicon carbide.
StatusFinished
Effective start/end date1/01/9831/12/99

Keywords

  • AlN
  • SiC
  • solid state
  • surfaces
  • photoemission