ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

X. J. Wang, S. Tari, R. Sporken, S. Sivananthan

Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

Résumé

Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

langue originaleAnglais
Pages (de - à)3346-3349
Nombre de pages4
journalApplied Surface Science
Volume257
Numéro de publication8
Les DOIs
Etat de la publicationPublié - 1 févr. 2011
Modification externeOui

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