ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

X. J. Wang; S. Tari; R. Sporken; S. Sivananthan

doi:10.1016/j.apsusc.2010.11.019

ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

X. J. Wang, S. Tari, R. Sporken, S. Sivananthan

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

langue originale	Anglais
Pages (de - à)	3346-3349
Nombre de pages	4
journal	Applied Surface Science
Volume	257
Numéro de publication	8
Les DOIs	https://doi.org/10.1016/j.apsusc.2010.11.019
Etat de la publication	Publié - 1 févr. 2011
Modification externe	Oui

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10.1016/j.apsusc.2010.11.019

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title = "ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy",

abstract = "Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.",

keywords = "Epitaxy, Intermixing, Strain, Valence band offset, XPS",

author = "Wang, {X. J.} and S. Tari and R. Sporken and S. Sivananthan",

year = "2011",

month = feb,

day = "1",

doi = "10.1016/j.apsusc.2010.11.019",

language = "English",

volume = "257",

pages = "3346--3349",

journal = "Applied Surface Science",

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publisher = "Elsevier",

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TY - JOUR

T1 - ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

AU - Wang, X. J.

AU - Tari, S.

AU - Sporken, R.

AU - Sivananthan, S.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

AB - Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

KW - Epitaxy

KW - Intermixing

KW - Strain

KW - Valence band offset

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=78651347250&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2010.11.019

DO - 10.1016/j.apsusc.2010.11.019

M3 - Article

AN - SCOPUS:78651347250

SN - 0169-4332

VL - 257

SP - 3346

EP - 3349

JO - Applied Surface Science

JF - Applied Surface Science

IS - 8

ER -

ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

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