XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters

Yan Busby, Celine Noël, Sara Pescetelli, Antonio Agresti, Aldo Di Carlo, Jean Jacques Pireaux, Laurent Houssiau

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar+ beam at different energies, with the ones obtained with argon ion clusters (Arn +) with different sizes (150<n<1000) and energies (up to 8 keV). A systematic study is performed on full mesoscopic perovskite (CH3NH3PbI3) solar cells and on model hybrid samples ((FAxCs1-xPbI3)0.85 (MAPbBr3)0.15)/TiO2). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb0) are found to accumulate at the bottom of the perovskite layer where the Pb0 /Pbtot fraction reaches 50%. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar+. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO2 surface chemistry. However, with argon cluster ions, Pb0 particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb0 /Pbtot fraction (up to 75%) at the perovskite/TiO2 interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.

langue originaleAnglais
titrePhysical Chemistry of Semiconductor Materials and Interfaces XVII
rédacteurs en chefHugo A. Bronstein, Felix Deschler, Thomas Kirchartz
EditeurSPIE
Volume10724
ISBN (Electronique)9781510620193
Les DOIs
étatPublié - 1 janv. 2018
EvénementPhysical Chemistry of Semiconductor Materials and Interfaces XVII 2018 - San Diego, États-Unis
Durée: 20 août 201823 août 2018

Une conférence

Une conférencePhysical Chemistry of Semiconductor Materials and Interfaces XVII 2018
PaysÉtats-Unis
La villeSan Diego
période20/08/1823/08/18

Empreinte digitale

Perovskite
X-ray Spectroscopy
Argon
Solar Cells
halides
X ray photoelectron spectroscopy
solar cells
Ion beams
argon
photoelectron spectroscopy
ion beams
profiles
TiO2
Iodine
x rays
iodine
absorbers
Absorber
Metals
Ions

Citer ceci

Busby, Y., Noël, C., Pescetelli, S., Agresti, A., Di Carlo, A., Pireaux, J. J., & Houssiau, L. (2018). XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters. Dans H. A. Bronstein, F. Deschler, & T. Kirchartz (eds.), Physical Chemistry of Semiconductor Materials and Interfaces XVII (Vol 10724). [1072408] SPIE. https://doi.org/10.1117/12.2320488
Busby, Yan ; Noël, Celine ; Pescetelli, Sara ; Agresti, Antonio ; Di Carlo, Aldo ; Pireaux, Jean Jacques ; Houssiau, Laurent. / XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters. Physical Chemistry of Semiconductor Materials and Interfaces XVII. Editeur / Hugo A. Bronstein ; Felix Deschler ; Thomas Kirchartz. Vol 10724 SPIE, 2018.
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title = "XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters",
abstract = "Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar+ beam at different energies, with the ones obtained with argon ion clusters (Arn +) with different sizes (1503NH3PbI3) solar cells and on model hybrid samples ((FAxCs1-xPbI3)0.85 (MAPbBr3)0.15)/TiO2). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb0) are found to accumulate at the bottom of the perovskite layer where the Pb0 /Pbtot fraction reaches 50{\%}. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar+. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO2 surface chemistry. However, with argon cluster ions, Pb0 particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb0 /Pbtot fraction (up to 75{\%}) at the perovskite/TiO2 interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.",
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author = "Yan Busby and Celine No{\"e}l and Sara Pescetelli and Antonio Agresti and {Di Carlo}, Aldo and Pireaux, {Jean Jacques} and Laurent Houssiau",
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Busby, Y, Noël, C, Pescetelli, S, Agresti, A, Di Carlo, A, Pireaux, JJ & Houssiau, L 2018, XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters. Dans HA Bronstein, F Deschler & T Kirchartz (eds), Physical Chemistry of Semiconductor Materials and Interfaces XVII. VOL. 10724, 1072408, SPIE, Physical Chemistry of Semiconductor Materials and Interfaces XVII 2018, San Diego, États-Unis, 20/08/18. https://doi.org/10.1117/12.2320488

XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters. / Busby, Yan; Noël, Celine; Pescetelli, Sara; Agresti, Antonio; Di Carlo, Aldo; Pireaux, Jean Jacques; Houssiau, Laurent.

Physical Chemistry of Semiconductor Materials and Interfaces XVII. Ed. / Hugo A. Bronstein; Felix Deschler; Thomas Kirchartz. Vol 10724 SPIE, 2018. 1072408.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters

AU - Busby, Yan

AU - Noël, Celine

AU - Pescetelli, Sara

AU - Agresti, Antonio

AU - Di Carlo, Aldo

AU - Pireaux, Jean Jacques

AU - Houssiau, Laurent

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar+ beam at different energies, with the ones obtained with argon ion clusters (Arn +) with different sizes (1503NH3PbI3) solar cells and on model hybrid samples ((FAxCs1-xPbI3)0.85 (MAPbBr3)0.15)/TiO2). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb0) are found to accumulate at the bottom of the perovskite layer where the Pb0 /Pbtot fraction reaches 50%. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar+. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO2 surface chemistry. However, with argon cluster ions, Pb0 particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb0 /Pbtot fraction (up to 75%) at the perovskite/TiO2 interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.

AB - Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar+ beam at different energies, with the ones obtained with argon ion clusters (Arn +) with different sizes (1503NH3PbI3) solar cells and on model hybrid samples ((FAxCs1-xPbI3)0.85 (MAPbBr3)0.15)/TiO2). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb0) are found to accumulate at the bottom of the perovskite layer where the Pb0 /Pbtot fraction reaches 50%. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar+. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO2 surface chemistry. However, with argon cluster ions, Pb0 particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb0 /Pbtot fraction (up to 75%) at the perovskite/TiO2 interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.

KW - Argon Clusters

KW - Depth profiling

KW - Hybrid Devices

KW - Perovskite

KW - Solar Cells

KW - XPS

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U2 - 10.1117/12.2320488

DO - 10.1117/12.2320488

M3 - Conference contribution

VL - 10724

BT - Physical Chemistry of Semiconductor Materials and Interfaces XVII

A2 - Bronstein, Hugo A.

A2 - Deschler, Felix

A2 - Kirchartz, Thomas

PB - SPIE

ER -

Busby Y, Noël C, Pescetelli S, Agresti A, Di Carlo A, Pireaux JJ et al. XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters. Dans Bronstein HA, Deschler F, Kirchartz T, rédacteurs en chef, Physical Chemistry of Semiconductor Materials and Interfaces XVII. Vol 10724. SPIE. 2018. 1072408 https://doi.org/10.1117/12.2320488