Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, E. Dubois, C. Augustin Duu, X. Tang, A. Delcorte, J.-P. Raskin

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.
    langue originaleAnglais
    journalApplied Physics Letters
    Volume99
    Numéro de publication1
    Les DOIs
    Etat de la publicationPublié - 4 juil. 2011

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