UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET

D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, S. Godey, X. Wallart, C. Soyer, D. Remiens, N. Reckinger, X. Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

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Résumé

Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.
langue originaleAnglais
titreECS Transactions
Pages339-344
Nombre de pages6
Volume19
Les DOIs
Etat de la publicationPublié - 1 janv. 2009

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Contient cette citation

Yarekha, D. A., Larrieu, G., Breil, N., Dubois, E., Godey, S., Wallart, X., Soyer, C., Remiens, D., Reckinger, N., Tang, X., Laszcz, A., Ratajczak, J., & Halimaoui, A. (2009). UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. Dans ECS Transactions (Vol 19, p. 339-344) https://doi.org/10.1149/1.3118961