UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET

D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, S. Godey, X. Wallart, C. Soyer, D. Remiens, N. Reckinger, X. Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.
langue originaleAnglais
titreECS Transactions
Pages339-344
Nombre de pages6
Volume19
Les DOIs
étatPublié - 1 janv. 2009

Empreinte digitale

ytterbium
electric contacts
field effect transistors
thin bodies
fabrication
SOI (semiconductors)
ultrahigh vacuum
communication
electrical properties
temperature
silicon
electrons

Citer ceci

Yarekha, D. A., Larrieu, G., Breil, N., Dubois, E., Godey, S., Wallart, X., ... Halimaoui, A. (2009). UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. Dans ECS Transactions (Vol 19, p. 339-344) https://doi.org/10.1149/1.3118961
Yarekha, D.A. ; Larrieu, G. ; Breil, N. ; Dubois, E. ; Godey, S. ; Wallart, X. ; Soyer, C. ; Remiens, D. ; Reckinger, N. ; Tang, X. ; Laszcz, A. ; Ratajczak, J. ; Halimaoui, A. / UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. ECS Transactions. Vol 19 2009. p. 339-344
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Yarekha, DA, Larrieu, G, Breil, N, Dubois, E, Godey, S, Wallart, X, Soyer, C, Remiens, D, Reckinger, N, Tang, X, Laszcz, A, Ratajczak, J & Halimaoui, A 2009, UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. Dans ECS Transactions. VOL. 19, p. 339-344. https://doi.org/10.1149/1.3118961

UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. / Yarekha, D.A.; Larrieu, G.; Breil, N.; Dubois, E.; Godey, S.; Wallart, X.; Soyer, C.; Remiens, D.; Reckinger, N.; Tang, X.; Laszcz, A.; Ratajczak, J.; Halimaoui, A.

ECS Transactions. Vol 19 2009. p. 339-344.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

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Yarekha DA, Larrieu G, Breil N, Dubois E, Godey S, Wallart X et al. UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET. Dans ECS Transactions. Vol 19. 2009. p. 339-344 https://doi.org/10.1149/1.3118961