Trapping of diffusing germanium by silicon excess co-implanted into fused silica

D. Barba, J. Demarche, F. Martin, G. Terwagne, G.G. Ross

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The trapping of germanium by silicon atoms, successively implanted into fused silica, is evidenced after thermal annealing at 1150 ° C. Rutherford backscattering spectroscopy and Raman measurements reveal a linear increase of remaining Ge concentration with the co-implanted Si fluence, accompanied by an increase of the Ge-Ge bond density, respectively. Comparison of Ge concentration profiles with scanning electron microscopy images shows the formation of nanoclusters, resulting from the accumulation of Ge within the region containing a greater concentration of co-implanted Si, whereas nanocavities, indicative of Ge release from nanostructures, are dominant in deeper sample region of lower Si excess concentration.
langue originaleAnglais
journalApplied Physics Letters
Numéro de publication14
Les DOIs
Etat de la publicationPublié - 1 oct. 2012

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