Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Ka̧tcki, F. Phillipp, P.A. Van Aken, N. Reckinger, E. Dubois

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700°C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500°C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700°C. © 2010 The Royal Microscopical Society.
langue originaleAnglais
titreJournal of Microscopy
Pages379-383
Nombre de pages5
Volume237
Les DOIs
étatPublié - 1 mars 2010

Empreinte digitale

erbium
electric contacts
transmission electron microscopy
titanium
annealing
caps
sputtering
electron beams
oxidation
temperature

Citer ceci

Ratajczak, J., Laszcz, A., Czerwinski, A., Ka̧tcki, J., Phillipp, F., Van Aken, P. A., ... Dubois, E. (2010). Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Dans Journal of Microscopy (Vol 237, p. 379-383) https://doi.org/10.1111/j.1365-2818.2009.03264.x
Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Ka̧tcki, J. ; Phillipp, F. ; Van Aken, P.A. ; Reckinger, N. ; Dubois, E. / Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Journal of Microscopy. Vol 237 2010. p. 379-383
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title = "Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications",
abstract = "In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700°C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500°C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700°C. {\circledC} 2010 The Royal Microscopical Society.",
author = "J. Ratajczak and A. Laszcz and A. Czerwinski and J. Ka̧tcki and F. Phillipp and {Van Aken}, P.A. and N. Reckinger and E. Dubois",
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Ratajczak, J, Laszcz, A, Czerwinski, A, Ka̧tcki, J, Phillipp, F, Van Aken, PA, Reckinger, N & Dubois, E 2010, Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Dans Journal of Microscopy. VOL. 237, p. 379-383. https://doi.org/10.1111/j.1365-2818.2009.03264.x

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. / Ratajczak, J.; Laszcz, A.; Czerwinski, A.; Ka̧tcki, J.; Phillipp, F.; Van Aken, P.A.; Reckinger, N.; Dubois, E.

Journal of Microscopy. Vol 237 2010. p. 379-383.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

AU - Ratajczak, J.

AU - Laszcz, A.

AU - Czerwinski, A.

AU - Ka̧tcki, J.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Reckinger, N.

AU - Dubois, E.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700°C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500°C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700°C. © 2010 The Royal Microscopical Society.

AB - In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700°C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500°C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700°C. © 2010 The Royal Microscopical Society.

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Ratajczak J, Laszcz A, Czerwinski A, Ka̧tcki J, Phillipp F, Van Aken PA et al. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Dans Journal of Microscopy. Vol 237. 2010. p. 379-383 https://doi.org/10.1111/j.1365-2818.2009.03264.x