Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.
|Pages (de - à)||131-135|
|Nombre de pages||5|
|journal||Journal of Optoelectronics and Advanced Materials|
|Numéro de publication||1-2|
|Etat de la publication||Publié - 2012|