Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂)

Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.