Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS 2T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN 2)

S Nénon, T Watanabe, H Brisset, Z Chen, J Ackermann, F Fages, S Bernardini, K Aguir, N Yoshimoto

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.
    langue originaleAnglais
    Pages (de - à)131-135
    Nombre de pages5
    journalJournal of Optoelectronics and Advanced Materials
    Volume14
    Numéro de publication1-2
    Etat de la publicationPublié - 2012

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