TY - JOUR
T1 - Toward the use of CVD-grown MoS2 nanosheets as field-emission source
AU - Deokar, Geetanjali
AU - Rajput, Nitul
AU - Lie, Junjie
AU - Deepak, Francis Leonard
AU - Ou-Yang, Wei
AU - Reckinger, Nicolas
AU - Bittencourt, Carla
AU - Colomer, Jean-François
AU - Jouiad, Mustapha
N1 - Funding Information:
Authors acknowledge Dr. Cyril Aubry for his help in AFM measurement. Part of the research leading to this work received funding from the European Union Seventh Framework Program under grant agreement No 604391 Graphene Flagship. Francis Leonard Deepak and Junjie Li thank the financial support provided by the N2020: Nanotechnology based functional solutions (NORTE-45-2015-02).
Publisher Copyright:
© 2018 Deokar et al.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - Densely populated edge-terminated vertically aligned two-dimensional MoS
2 nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO
2 by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 μA/cm
2 was measured. The low turnon field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS
2 with sharp and exposed edges. Our findings show that the fabricated MoS
2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.
AB - Densely populated edge-terminated vertically aligned two-dimensional MoS
2 nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO
2 by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 μA/cm
2 was measured. The low turnon field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS
2 with sharp and exposed edges. Our findings show that the fabricated MoS
2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.
KW - Chemical vapor deposition (CVD)
KW - Field emission
KW - Molybdenum disulfide (MoS )
KW - Nanosheets
KW - Sulfurization
KW - Transmission electron microscopy (TEM)
UR - http://www.scopus.com/inward/record.url?scp=85048606247&partnerID=8YFLogxK
U2 - 10.3762/bjnano.9.160
DO - 10.3762/bjnano.9.160
M3 - Article
SN - 2190-4286
VL - 9
SP - 1686
EP - 1694
JO - Beilstein Journal of Nanotechnology
JF - Beilstein Journal of Nanotechnology
IS - 1
ER -